Catalytic graphitization and Ohmic contact formation on 4H–SiC

W Lu, WC Mitchel, GR Landis, TR Crenshaw… - Journal of Applied …, 2003 - pubs.aip.org
SiC is a wide-band-gap semiconductor with high breakdown electrical field, high saturation
electron velocity, high thermal conductivity, chemical inertness, and strong mechanical …
被引用次数：75 相关文章

Catalytic graphitization and Ohmic contact formation on 4H-SiC

W Lu, WC Mitchel, GR Landis… - Journal of Applied …, 2003 - ui.adsabs.harvard.edu
Electrical contact properties and graphitic structures of metal/carbon/4H-SiC structures are
investigated. Metals studied include Ni, Co, Cr, NiCr, Ti, W, Mo, Al, and Au. Ohmic contacts …

[引用][C] Catalytic graphitization and Ohmic contact formation on 4H–SiC

W Lu, WC Mitchel, GR Landis, TR Crenshaw… - Journal of Applied …, 2003 - cir.nii.ac.jp

Catalytic graphitization and Ohmic contact formation on 4H–SiC

W Lu, WC Mitchel, GR Landis, TR Crenshaw… - Journal of Applied …, 2003 - pubs.aip.org
Electrical contact properties and graphitic structures of metal/carbon/4H–SiC structures are
investigated. Metals studied include Ni, Co, Cr, NiCr, Ti, W, Mo, Al, and Au. Ohmic contacts …

[引用][C] Catalytic graphitization and Ohmic contact formation on 4H-SiC

W LU, WC MITCHEL, GR LANDIS… - Journal of …, 2003 - American Institute of Physics