A physics-based single event transient pulse width model for CMOS VLSI circuits
The single-event transients in MOSFETs due to heavy ion strikes introduce soft errors in sub-
50 nm CMOS VLSI circuits. These transients are easily captured and propagated in high …
50 nm CMOS VLSI circuits. These transients are easily captured and propagated in high …
[PDF][PDF] A physics-based single event transient pulse width model for CMOS VLSI circuits
YM Aneesh, B Bindu - IEEE Transactions on Device and Materials …, 2020 - drive.google.com
The single-event transients in MOSFETs due to heavy ion strikes introduce soft errors in sub-
50 nm CMOS VLSI circuits. These transients are easily captured and propagated in high …
50 nm CMOS VLSI circuits. These transients are easily captured and propagated in high …