Poly-Si∕ TiN∕ HfO2 gate stack etching in high-density plasmas

A Le Gouil, O Joubert, G Cunge… - Journal of Vacuum …, 2007 - pubs.aip.org
The authors have investigated the dry etch mechanisms of complex poly-Si∕ Ti N∕ Hf O 2
gate stacks and the issues that are correlated with the introduction of a thin metal layer in the …

[引用][C] Poly-Si/TiN/HfO2 gate stack etching in high density plasma

A Le Gouil, OR Joubert, G Cunge… - Journal of Vacuum …, 2007 - hal.science
Poly-Si/TiN/HfO2 gate stack etching in high density plasma - Archive ouverte HAL Accéder
directement au contenu Documentation FR Français (FR) Anglais (EN) Se connecter HAL …

[引用][C] Poly-Si∕ TiN∕ HfO [sub 2] gate stack etching in high-density plasmas

A Le Gouil, O Joubert, G Cunge… - Journal of Vacuum …, 2007 - ui.adsabs.harvard.edu
Poly-Si∕TiN∕HfO[sub 2] gate stack etching in high-density plasmas - NASA/ADS Now on
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Poly- gate stack etching in high-density plasmas

A Le Gouil, O Joubert, G Cunge… - Journal of Vacuum …, 2007 - pubs.aip.org
The authors have investigated the dry etch mechanisms of complex poly-Si∕ Ti N∕ Hf O 2
gate stacks and the issues that are correlated with the introduction of a thin metal layer in the …

[引用][C] Poly-Si/TiN/HfO2 gate stack etching in high density plasma

A Le Gouil, OR Joubert, G Cunge… - Journal of Vacuum …, 2007 - hal.univ-grenoble-alpes.fr
Poly-Si/TiN/HfO2 gate stack etching in high density plasma - Université Grenoble Alpes
Accéder directement au contenu Documentation FR Se connecter Portail HAL UGA …

[引用][C] Poly-Si∕ TiN∕ HfO [sub 2] gate stack etching in high-density plasmas

A Le Gouil, O Joubert, G Cunge, T Chevolleau… - Journal of Vacuum …, 2007 - cir.nii.ac.jp

[引用][C] Poly-Si/TiN/HfO2 gate stack etching in high density plasma

A Le Gouil, OR Joubert, G Cunge… - Journal of Vacuum …, 2007 - hal.univ-grenoble-alpes.fr
Poly-Si/TiN/HfO2 gate stack etching in high density plasma - Université Grenoble Alpes
Accéder directement au contenu Documentation FR Se connecter Portail HAL UGA …