Ohmic contact properties of Ni/C film on 4H-SiC

W Lu, WC Mitchel, GR Landis, TR Crenshaw… - Solid-State …, 2003 - Elsevier
Ohmic contact formation of Ni/C film on n-type 4H-SiC is investigated. A carbon interfacial
layer between Ni film and SiC is used to improve ohmic contact properties. The contact …
被引用次数：63 相关文章

Ohmic contact properties of Ni/C film on 4H-SiC

W Lu, WC Mitchel, GR Landis… - Solid State …, 2003 - ui.adsabs.harvard.edu
Ohmic contact formation of Ni/C film on n-type 4H-SiC is investigated. A carbon interfacial
layer between Ni film and SiC is used to improve ohmic contact properties. The contact …

Ohmic contact properties of Ni/C film on 4H-SiC

W Lu, WC Mitchel, GR Landis, TR Crenshaw… - Solid State …, 2003 - infona.pl
Ohmic contact formation of Ni/C film on n-type 4H-SiC is investigated. A carbon interfacial
layer between Ni film and SiC is used to improve ohmic contact properties. The contact …