Analytical modeling of random discrete traps induced threshold voltage fluctuations in double-gate MOSFET with HfO2/SiO2 gate dielectric stack

SR Sriram, B Bindu - Microelectronics Reliability, 2019 - Elsevier
An analytical model of threshold voltage fluctuations due to random discrete traps at Si/SiO 2
interface and in gate oxide regions for undoped double-gate (DG) MOSFET with high-k/SiO …
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Analytical modeling of random discrete traps induced threshold voltage fluctuations in double-gate MOSFET with HfO2/SiO2 gate dielectric stack

S SR, B Bindu - Microelectronics Reliability, 2019 - ui.adsabs.harvard.edu
An analytical model of threshold voltage fluctuations due to random discrete traps at Si/SiO 2
interface and in gate oxide regions for undoped double-gate (DG) MOSFET with high-k/SiO …

Analytical modeling of random discrete traps induced threshold voltage fluctuations in double-gate MOSFET with HfO2/SiO2 gate dielectric stack

SR Sriram, B Bindu - Microelectronics reliability, 2019 - dialnet.unirioja.es
An analytical model of threshold voltage fluctuations due to random discrete traps at Si/SiO2
interface and in gate oxide regions for undoped double-gate (DG) MOSFET with high-k/SiO2 …