Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation

K Ono, N Nakazaki, H Tsuda, Y Takao… - Journal of Physics D …, 2017 - iopscience.iop.org
Atomic-or nanometer-scale roughness on feature surfaces has become an important issue
to be resolved in the fabrication of nanoscale devices in industry. Moreover, in some cases …

Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation

K Ono, N Nakazaki, H Tsuda… - Journal of Physics D …, 2017 - ui.adsabs.harvard.edu
Atomic-or nanometer-scale roughness on feature surfaces has become an important issue
to be resolved in the fabrication of nanoscale devices in industry. Moreover, in some cases …

[引用][C] Erratum: Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation (2017 J. Phys. D: Appl. Phys. 50 414001)

K Ono, N Nakazaki, H Tsuda, Y Takao… - Journal of Physics D …, 2017 - iopscience.iop.org
Erratum: Surface morphology evolution during plasma etching of silicon: roughening, smoothing
and ripple formation (2017 J. Phys Page 1 Journal of Physics D: Applied Physics ERRATUM …

[引用][C] Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation

K Ono, N Nakazaki, H Tsuda, Y Takao… - Journal of Physics D …, 2017 - cir.nii.ac.jp
Surface morphology evolution during plasma etching of silicon: roughening, smoothing and
ripple formation | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ …

Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation

K Ono, N Nakazaki, H Tsuda, Y Takao… - Journal of Physics. D …, 2017 - inis.iaea.org
Surface morphology evolution during plasma etching of silicon..|INIS IAEA NUCLEUS Sign In
Sign In Register Help 50+ years of INIS International Nuclear Information System International …

[引用][C] Erratum: Surface morphology evolution during plasma etching of silicon: roughening, smoothing and ripple formation (2017 J. Phys. D: Appl. Phys. 50 414001)

K Ono, N Nakazaki, H Tsuda… - Journal of Physics D …, 2017 - ui.adsabs.harvard.edu
Erratum: Surface morphology evolution during plasma etching of silicon: roughening, smoothing
and ripple formation <A href="/abs/">(2017 J. Phys. D: Appl. Phys. 50 414001</A>) - NASA/ADS …