Evaluation of local free carrier concentrations in individual heavily-doped GaN: Si micro-rods by micro-Raman spectroscopy

MS Mohajerani, S Khachadorian, T Schimpke… - Applied Physics …, 2016 - pubs.aip.org
Three-dimensional III-nitride micro-structures are being developed as a promising candidate
for the future opto-electrical devices. In this study, we demonstrate a quick and straight …
被引用次数：22 相关文章

Evaluation of local free carrier concentrations in individual heavily-doped GaN: Si micro-rods by micro-Raman spectroscopy

MS Mohajerani, S Khachadorian… - Applied Physics …, 2016 - ui.adsabs.harvard.edu
Three-dimensional III-nitride micro-structures are being developed as a promising candidate
for the future opto-electrical devices. In this study, we demonstrate a quick and straight …

Evaluation of local free carrier concentrations in individual heavily-doped GaN: Si micro-rods by micro-Raman spectroscopy

MS Mohajerani, S Khachadorian, T Schimpke… - Applied Physics …, 2016 - pubs.aip.org
Three-dimensional III-nitride micro-structures are being developed as a promising candidate
for the future opto-electrical devices. In this study, we demonstrate a quick and straight …

[引用][C] Evaluation of local free carrier concentrations in individual heavily-doped GaN: Si micro-rods by micro-Raman spectroscopy

MS Mohajerani, S Khachadorian… - Applied Physics …, 2016 - epub.uni-regensburg.de
Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods
by micro-Raman spectroscopy - Publikationsserver der Universität Regensburg Navigation …