Tailoring the optical properties of InAs/GaAs quantum dots by means of GaAsSb, InGaAs and InGaAsSb strain reducing layers

A Salhi, S Alshaibani, B Ilahi, M Alhamdan… - Journal of Alloys and …, 2017 - Elsevier
Abstract Self-organized InAs QDs have been grown by Molecular Beam Epitaxy with
different strain reducing layers (SRL) having nearly similar lattice mismatches to GaAs. The …
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Tailoring the optical properties of InAs/GaAs quantum dots by means of GaAsSb, InGaAs and InGaAsSb strain reducing layers

A Salhi, S Alshaibani, B Ilahi, M Alhamdan… - Journal of Alloys and …, 2017 - infona.pl
Self-organized InAs QDs have been grown by Molecular Beam Epitaxy with different strain
reducing layers (SRL) having nearly similar lattice mismatches to GaAs. The used SRLs are …