Parallel connection of silicon carbide MOSFETs—Challenges, mechanism, and solutions

H Li, S Zhao, X Wang, L Ding… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Power semiconductor devices are often connected in parallel to increase the current rating
of the power conversion systems. However, due to mismatched circuit parameters or …
被引用次数：21 相关文章

Parallel Connection of Silicon Carbide MOSFETs-Challenges, Mechanism, and Solutions

H Li, S Zhao, X Wang, L Ding… - IEEE transactions on …, 2023 - diva-portal.org
Power semiconductor devices are often connected in parallel to increase the current rating
of the power conversion systems. However, due to mismatched circuit parameters or …
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[PDF][PDF] Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions

H Li, S Zhao, X Wang, L Ding… - IEEE TRANSACTIONS ON …, 2023 - vbn.aau.dk
Power semiconductor devices are often connected in parallel to increase the current rating
of the power conversion systems. However, due to mismatched circuit parameters or …

[引用][C] Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions

H Li, S Zhao, X Wang, L Ding… - IEEE Transactions on …, 2023 - ui.adsabs.harvard.edu
Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions
- NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS Parallel …
[PDF] aau.dk

[PDF][PDF] Parallel Connection of Silicon Carbide MOSFETs—Challenges, Mechanism, and Solutions

H Li, S Zhao, X Wang, L Ding… - IEEE TRANSACTIONS ON …, 2023 - vbn.aau.dk
Power semiconductor devices are often connected in parallel to increase the current rating
of the power conversion systems. However, due to mismatched circuit parameters or …