Improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications

MW Cole, PC Joshi, CW Hubbard, MC Wood… - Journal of Applied …, 2000 - pubs.aip.org
Ni/WSi/Ti/Pt Ohmic contacts to n-SiC were investigated as a function of annealing
temperatures up to 1000° C. Annealing at temperatures between 950 and 1000° C yielded …
被引用次数：83 相关文章

Improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications

MW Cole, PC Joshi, CW Hubbard… - Journal of Applied …, 2000 - ui.adsabs.harvard.edu
Abstract Ni/WSi/Ti/Pt Ohmic contacts to n-SiC were investigated as a function of annealing
temperatures up to 1000 C. Annealing at temperatures between 950 and 1000 C yielded …

Improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications

MW Cole, PC Joshi, CW Hubbard, MC Wood… - JOURNAL OF …, 2000 - pubs.aip.org
Ni/WSi/Ti/Pt Ohmic contacts to n-SiC were investigated as a function of annealing
temperatures up to 1000 C. Annealing at temperatures between 950 and 1000 C yielded …
[PDF] academia.edu

[PDF][PDF] Improved Ni Based Composite Ohmic Contact to n-Sic for High Temperature and High Power Device Applications

MW Cole, MH Ervin, B Geil, F Ren - academia.edu
Abstract Ni/WSi/Ti/Pt Ohmic contacts to n-Sic were investigated as a function of annealing
temperatures up to 1000 “C. Annealing at temperatures between 950 and 1000 “C yielded …
[PDF] researchgate.net

[PDF][PDF] Improved Ni Based Composite Ohmic Contact to n-Sic for High Temperature and High Power Device Applications

MW Cole, MH Ervin, B Geil, F Ren - researchgate.net
Abstract Ni/WSi/Ti/Pt Ohmic contacts to n-Sic were investigated as a function of annealing
temperatures up to 1000 “C. Annealing at temperatures between 950 and 1000 “C yielded …

Improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications

MW Cole, PC Joshi, CW Hubbard, MC Wood… - Journal of Applied …, 2000 - cir.nii.ac.jp
抄録< jats: p> Ni/WSi/Ti/Pt Ohmic contacts to n-SiC were investigated as a function of
annealing temperatures up to 1000 C. Annealing at temperatures between 950 and 1000 C …
[PDF] academia.edu

[PDF][PDF] Improved Ni Based Composite Ohmic Contact to n-Sic for High Temperature and High Power Device Applications

MW Cole, MH Ervin, B Geil, F Ren - academia.edu
Abstract Ni/WSi/Ti/Pt Ohmic contacts to n-Sic were investigated as a function of annealing
temperatures up to 1000 “C. Annealing at temperatures between 950 and 1000 “C yielded …