Compositional contrast in AlxGa1− xN/GaN heterostructures using scanning spreading resistance microscopy
Scanning spreading resistance microscopy has found extensive use as a dopant-profiling
technique for silicon-based devices, and to a lesser extent for some III–V materials. Here we …
technique for silicon-based devices, and to a lesser extent for some III–V materials. Here we …
[引用][C] Compositional contrast in AlxGa1-xN/GaN heterostructures using scanning spreading resistance microscopy
IS FRASER, RA OLIVER, J SUMNER… - Applied surface …, 2007 - pascal-francis.inist.fr
Compositional contrast in AlxGa1-xN/GaN heterostructures using scanning spreading
resistance microscopy CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic …
resistance microscopy CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic …
Compositional contrast in AlxGa1− xN/GaN heterostructures using scanning spreading resistance microscopy
IS Fraser, RA Oliver, J Sumner, C McAleese… - Applied Surface …, 2007 - infona.pl
Scanning spreading resistance microscopy has found extensive use as a dopant-profiling
technique for silicon-based devices, and to a lesser extent for some III–V materials. Here we …
technique for silicon-based devices, and to a lesser extent for some III–V materials. Here we …
Compositional contrast in Al xGa 1- xN/GaN heterostructures using scanning spreading resistance microscopy
IS Fraser, RA Oliver, J Sumner… - Applied Surface …, 2007 - ui.adsabs.harvard.edu
Scanning spreading resistance microscopy has found extensive use as a dopant-profiling
technique for silicon-based devices, and to a lesser extent for some III-V materials. Here we …
technique for silicon-based devices, and to a lesser extent for some III-V materials. Here we …