Raman study of InxGa1− xN (x= 0.32–0.9) films irradiated with Xe ions at room temperature and 773 K
WS Ai, LM Zhang, W Jiang, JX Peng, L Chen… - Nuclear Instruments and …, 2018 - Elsevier
Abstract Wurtzite In x Ga 1− x N (x= 0.32, 0.47, 0.7, 0.8, and 0.9) films grown on the GaN
epilayers were irradiated with 5 MeV Xe ions to fluences of 3× 10 13 and 6× 10 13 cm− 2 at …
epilayers were irradiated with 5 MeV Xe ions to fluences of 3× 10 13 and 6× 10 13 cm− 2 at …
Raman study of In x Ga1− x N (x= 0.32–0.9) films irradiated with Xe ions at room temperature and 773 K
WS Ai, LM Zhang, W Jiang, JX Peng, L Chen… - … and Methods in …, 2018 - inis.iaea.org
[en] Wurtzite In x Ga 1− x N (x= 0.32, 0.47, 0.7, 0.8, and 0.9) films grown on the GaN
epilayers were irradiated with 5 MeV Xe ions to fluences of 3× 10 13 and 6× 10 13 cm− 2 at …
epilayers were irradiated with 5 MeV Xe ions to fluences of 3× 10 13 and 6× 10 13 cm− 2 at …
Raman study of InxGa1-xN (x = 0.32-0.9) films irradiated with Xe ions at room temperature and 773 K
WS Ai, LM Zhang, W Jiang, JX Peng… - … and Methods in …, 2018 - ui.adsabs.harvard.edu
Abstract Wurtzite In x Ga 1-x N (x= 0.32, 0.47, 0.7, 0.8, and 0.9) films grown on the GaN
epilayers were irradiated with 5 MeV Xe ions to fluences of 3× 10 13 and 6× 10 13 cm-2 at …
epilayers were irradiated with 5 MeV Xe ions to fluences of 3× 10 13 and 6× 10 13 cm-2 at …
Raman study of InxGa1 (-) Nx (x= 0.32-0.9) films irradiated with Xe ions at room temperature and 773 K
WS Ai, LM Zhang, W Jiang, JX Peng, L Chen, TS Wang - 2018 - ir.lzu.edu.cn
摘要Wurtzite InxGa1-x (x= 0.32, 0.47, 0.7, 0.8, and 0.9) films grown on the GaN epilayers
were irradiated with 5 MeV Xe ions to fluences of 3 x 10 (13) and 6 x 10 (13) cm (-2) at room …
were irradiated with 5 MeV Xe ions to fluences of 3 x 10 (13) and 6 x 10 (13) cm (-2) at room …