Silicon dioxide and low-k material sputtering in dual frequency inductive discharge by argon ions with energies from 16 to 200 eV
DV Lopaev, TV Rakhimova, AT Rakhimov… - Journal of Physics D …, 2017 - iopscience.iop.org
Thermal and PECVD deposited silicon dioxide and organosilicate low-k materials with
porosity from 24 to 44% and corresponding k values from 2.5 to 2.0 were sputtered in dual …
porosity from 24 to 44% and corresponding k values from 2.5 to 2.0 were sputtered in dual …
Silicon dioxide and low-k material sputtering in dual frequency inductive discharge by argon ions with energies from 16 to 200 eV
DV Lopaev, TV Rakhimova… - Journal of Physics …, 2018 - ui.adsabs.harvard.edu
Thermal and PECVD deposited silicon dioxide and organosilicate low-k materials with
porosity from 24 to 44% and corresponding k values from 2.5 to 2.0 were sputtered in dual …
porosity from 24 to 44% and corresponding k values from 2.5 to 2.0 were sputtered in dual …
Silicon dioxide and low-k material sputtering in dual frequency inductive discharge by argon ions with energies from 16 to 200 eV
DV Lopaev, TV Rakhimova, AT Rakhimov… - Journal of Physics. D …, 2018 - inis.iaea.org
[en] Thermal and PECVD deposited silicon dioxide and organosilicate low-k materials with
porosity from 24 to 44% and corresponding k values from 2.5 to 2.0 were sputtered in dual …
porosity from 24 to 44% and corresponding k values from 2.5 to 2.0 were sputtered in dual …
[引用][C] Silicon dioxide and low-k material sputtering in dual frequency inductive discharge by argon ions with energies from 16 to 200 eV
DV Lopaev, TV Rakhimova, AT Rakhimov… - Journal of Physics D …, 2018 - elibrary.ru