Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor phase epitaxy using CCl4

WS Hobson, SJ Pearton, DM Kozuch… - Applied Physics …, 1992 - pubs.aip.org
The carbon doping properties of GaAs grown by low pressure (30 Torr) organometallic
vapor phase epitaxy at 520–700° C with CCl4 as the dopant precursor were compared for …
被引用次数：51 相关文章

Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor phase epitaxy using CCl4

WS Hobson, SJ Pearton, DM Kozuch… - Applied Physics Letters, 1992 - cir.nii.ac.jp
抄録< jats: p> The carbon doping properties of GaAs grown by low pressure (30 Torr)
organometallic vapor phase epitaxy at 520–700 C with CCl4 as the dopant precursor were …

Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor phase epitaxy using CCl4

WS Hobson, SJ Pearton, DM Kozuch… - Applied Physics …, 1992 - pubs.aip.org
The carbon doping properties of GaAs grown by low pressure (30 Torr) organometallic
vapor phase epitaxy at 520-700 “C with Ccl, as the dopant precursor were compared for the …

Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor phase epitaxy using CCl4

WS Hobson, SJ Pearton, DM Kozuch… - Applied Physics …, 1992 - ui.adsabs.harvard.edu
The carbon doping properties of GaAs grown by low pressure (30 Torr) organometallic
vapor phase epitaxy at 520-700 C with CCl 4 as the dopant precursor were compared for the …