Accurate carrier profiling of n-type GaAs junctions
B Sciana, D Radziewicz, Z Li - Materials science in semiconductor …, 2008 - Elsevier
As CMOS is approaching the 22nm node, the importance of high-mobility materials such as
Ge and GaAs is rapidly increasing. For the timely development of these new technologies …
Ge and GaAs is rapidly increasing. For the timely development of these new technologies …
Accurate carrier profiling of n-type GaAs junctions
T Clarysse, G Brammertz, D Vanhaeren… - Materials Science in …, 2008 - infona.pl
As CMOS is approaching the 22nm node, the importance of high-mobility materials such as
Ge and GaAs is rapidly increasing. For the timely development of these new technologies …
Ge and GaAs is rapidly increasing. For the timely development of these new technologies …
[引用][C] Accurate carrier profiling of n-type GaAs junctions
T Clarysse, G Brammertz, D Vanhaeren, P Eyben… - 2008 - imec-publications.be
Accurate carrier profiling of n-type GaAs junctions Toggle navigation My submissions Login
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[PDF][PDF] Accurate carrier profiling of n-type GaAs junctions
M Meuris, W Vandervorst, R Srnanek… - Materials Science in …, 2008 - academia.edu
abstract As CMOS is approaching the 22nm node, the importance of high-mobility materials
such as Ge and GaAs is rapidly increasing. For the timely development of these new …
such as Ge and GaAs is rapidly increasing. For the timely development of these new …
[引用][C] Accurate carrier profiling of n-type GaAs junctions
T CLARYSSE, G BRAMMERTZ… - Materials science in …, 2008 - pascal-francis.inist.fr
Accurate carrier profiling of n-type GaAs junctions CNRS Inist Pascal-Francis CNRS Pascal
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Accurate carrier profiling of n-type GaAs junctions
T Clarysse, G BRAMMERTZ, D Vanhaeren, P Eyben… - 2008 - documentserver.uhasselt.be
As CMOS is approaching the 22 nm node, the importance of high-mobility materials such as
Ge and GaAs is rapidly increasing. For the timely development of these new technologies …
Ge and GaAs is rapidly increasing. For the timely development of these new technologies …
[PDF][PDF] Accurate carrier profiling of n-type GaAs junctions
M Meuris, W Vandervorst, R Srnanek… - Materials Science in …, 2008 - academia.edu
abstract As CMOS is approaching the 22nm node, the importance of high-mobility materials
such as Ge and GaAs is rapidly increasing. For the timely development of these new …
such as Ge and GaAs is rapidly increasing. For the timely development of these new …