Temperature and excitation density dependence of the photoluminescence from annealed InAs/GaAs quantum dots

EC Le Ru, J Fack, R Murray - Physical Review B, 2003 - APS
Using rapid thermal annealing, we fabricated a series of InAs/GaAs quantum dot samples
with ground-state emission ranging from 1.05 eV to 1.35 eV. This set of annealed samples …

[PDF][PDF] Temperature and excitation density dependence of the photoluminescence from annealed InAsÕGaAs quantum dots

EC Le Ru, J Fack, R Murray - PHYSICAL REVIEW B Phys Rev B, 2003 - wgtn.ac.nz
Self-assembled quantum dots QD's are predicted to replace quantum wells QW's as the
active layer of many optical and electro-optical devices. Three-dimensional confinement of …

[PDF][PDF] Temperature and excitation density dependence of the photoluminescence from annealed InAsÕGaAs quantum dots

EC Le Ru, J Fack, R Murray - PHYSICAL REVIEW B Phys Rev B, 2003 - scholar.archive.org
Self-assembled quantum dots QD's are predicted to replace quantum wells QW's as the
active layer of many optical and electro-optical devices. Three-dimensional confinement of …

[引用][C] Temperature and excitation density dependence of the photoluminescence from annealed InAs/GaAs quantum dots

EC Le Ru, J Fack, R Murray - Physical Review B, 2003 - cir.nii.ac.jp
Temperature and excitation density dependence of the photoluminescence from annealed
InAs/GaAs quantum dots | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ …

Temperature and excitation density dependence of the photoluminescence from annealed InAs/GaAs quantum dots

EC Le Ru, J Fack, R Murray - Physical Review B, 2003 - ui.adsabs.harvard.edu
Using rapid thermal annealing, we fabricated a series of InAs/GaAs quantum dot samples
with ground-state emission ranging from 1.05 eV to 1.35 eV. This set of annealed samples …

[引用][C] Temperature and excitation density dependence of the photoluminescence from annealed InAs/GaAs quantum dots

EC LE RU, J FACK, R MURRAY - Physical review B …, 2003 - American Physical Society