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[HTML][HTML] Design of strain-engineered GeSn/GeSiSn quantum dots for mid-IR direct bandgap emission on Si substrate

R Al-Saigh, M Baira, B Salem, B Ilahi - Nanoscale Research Letters, 2018 - Springer
Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been
numerically investigated aiming to study their potentiality towards direct bandgap emission …
被引用次数：12 相关文章

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

R Al-Saigh, M Baira, B Salem… - Nanoscale Research …, 2018 - ui.adsabs.harvard.edu
Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been
numerically investigated aiming to study their potentiality towards direct bandgap emission …

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate.

R Al-Saigh, M Baira, B Salem, B Ilahi - Nanoscale Research Letters, 2018 - europepmc.org
Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been
numerically investigated aiming to study their potentiality towards direct bandgap emission …

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate.

R Al-Saigh, M Baira, B Salem… - Nanoscale Research …, 2018 - search.ebscohost.com
Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been
numerically investigated aiming to study their potentiality towards direct bandgap emission …

[引用][C] Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

R Al-Saigh, M Baira, B Salem, B Ilahi - Nanoscale Research Letters, 2018 - cir.nii.ac.jp
Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission
on Si Substrate | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ …

[引用][C] Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

R Al-Saigh, M Baira, B Salem, B Ilahi - Nanoscale Research Letters, 2018 - hal.science
Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap
Emission on Si Substrate - Archive ouverte HAL Accéder directement au contenu …

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

R Al-Saigh, M Baira, B Salem… - Nanoscale research …, 2018 - pubmed.ncbi.nlm.nih.gov
Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been
numerically investigated aiming to study their potentiality towards direct bandgap emission …

[引用][C] Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

R Al-Saigh, M Baira, B Salem… - Nanoscale Research …, 2018 - hal.univ-grenoble-alpes.fr
Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission
on Si Substrate - Université Grenoble Alpes Accéder directement au contenu Documentation …

Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

R Al-Saigh, M Baira, B Salem… - Nanoscale Research …, 2018 - search.proquest.com
Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been
numerically investigated aiming to study their potentiality towards direct bandgap emission …
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[HTML][HTML] Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate

R Al-Saigh, M Baira, B Salem, B Ilahi - Nanoscale Research Letters, 2018 - ncbi.nlm.nih.gov
Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been
numerically investigated aiming to study their potentiality towards direct bandgap emission …