Design, performance analysis of gaas/6h-sic/algan metal semiconductor fet in submicron technology
B Balaji, KS Rao, KG Sravani, M Aditya - Silicon - Springer
A unique structure of GaAs/6H-SiC/InGaN metal–semiconductor field-effect transistor has
been proposed and demonstrated in this work. The proposed GaAs/6H-SiC/InGaNMetal …
been proposed and demonstrated in this work. The proposed GaAs/6H-SiC/InGaNMetal …
Design, Performance Analysis of GaAs/6H-SiC/AlGaN Metal Semiconductor FET In Submicron Technology
B Balaji, KS Rao - 2021 - researchsquare.com
A unique structure of GaAs/6H-SiC/InGaN metal semiconductor field effect transistor has
been proposed and demonstrated in this work. The proposed GaAs/6H-SiC/InGaN Metal …
been proposed and demonstrated in this work. The proposed GaAs/6H-SiC/InGaN Metal …
Design, Performance Analysis of GaAs/6H-SiC/AlGaN Metal Semiconductor FET in Submicron Technology
B Balaji, KS Rao, KG Sravani, M Aditya - Silicon, 2022 - search.proquest.com
A unique structure of GaAs/6H-SiC/InGaN metal–semiconductor field-effect transistor has
been proposed and demonstrated in this work. The proposed GaAs/6H-SiC/InGaNMetal …
been proposed and demonstrated in this work. The proposed GaAs/6H-SiC/InGaNMetal …