Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide

IP Nikitina, KV Vassilevski, NG Wright… - Journal of Applied …, 2005 - pubs.aip.org
Nickel-based contacts, deposited on 4H-SiC C-face substrates, were annealed at
temperatures ranging from 800 to 1040 C and the phase composition of the contact layers …
被引用次数：203 相关文章

[引用][C] Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide

IP Nikitina, KV Vassilevski, NG Wright… - Journal of Applied …, 2005 - elibrary.ru

Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide

IP Nikitina, KV Vassilevski, NG Wright… - Journal of Applied …, 2005 - cir.nii.ac.jp
抄録< jats: p> Nickel-based contacts, deposited on 4H-SiC C-face substrates, were
annealed at temperatures ranging from 800to1040C and the phase composition of the …

Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide

IP Nikitina, KV Vassilevski, NG Wright… - Journal of Applied …, 2005 - ui.adsabs.harvard.edu
Nickel-based contacts, deposited on 4H-SiC C-face substrates, were annealed at
temperatures ranging from 800to1040C and the phase composition of the contact layers …

Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide

IP Nikitina, KV Vassilevski, NG Wright… - Journal of Applied …, 2005 - eprints.ncl.ac.uk
Nickel-based contacts, deposited on 4H-SiC C-face substrates, were annealed at
temperatures ranging from 800 to 1040 C and the phase composition of the contact layers …

Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide

IP Nikitina, KV Vassilevski, NG Wright… - Journal of Applied …, 2005 - pubs.aip.org
Nickel-based contacts, deposited on 4H-SiC C-face substrates, were annealed at
temperatures ranging from 800 to 1040 C and the phase composition of the contact layers …

[引用][C] Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide

IP NIKITINA, KV VASSILEVSKI… - Journal of …, 2005 - American Institute of Physics