Helium plasma modification of Si and Si3N4 thin films for advanced etch processes

V Martirosyan, E Despiau-Pujo, J Dubois… - Journal of Vacuum …, 2018 - pubs.aip.org
To achieve the etching of silicon nitride spacers with a perfect anisotropy and an almost
infinite selectivity, an alternative method consisting of two sequential steps—surface …
被引用次数：15 相关文章

[引用][C] Helium plasma modification of Si and Si 3 N 4 thin films for advanced etch processes

V Martirosyan, E Despiau-Pujo… - Journal of Vacuum …, 2018 - hal.univ-grenoble-alpes.fr
Helium plasma modification of Si and Si 3 N 4 thin films for advanced etch processes -
Université Grenoble Alpes Accéder directement au contenu Documentation FR Se connecter …

Helium plasma modification of Si and Si3N4 thin films for advanced etch processes

V Martirosyan, E Despiau-Pujo, J Dubois… - Journal of Vacuum …, 2018 - pubs.aip.org
To achieve the etching of silicon nitride spacers with a perfect anisotropy and an almost
infinite selectivity, an alternative method consisting of two sequential steps—surface …

[引用][C] Helium plasma modification of Si and Si3N4 thin films for advanced etch processes

V Martirosyan, E Despiau-Pujo… - Journal of Vacuum …, 2018 - ui.adsabs.harvard.edu
Helium plasma modification of Si and Si3N4 thin films for advanced etch processes - NASA/ADS
Now on home page ads icon ads Enable full ADS view NASA/ADS Helium plasma …

[引用][C] Helium plasma modification of Si and Si 3 N 4 thin films for advanced etch processes

V Martirosyan, E Despiau-Pujo, J Dubois… - Journal of Vacuum …, 2018 - hal.science
Helium plasma modification of Si and Si 3 N 4 thin films for advanced etch processes - Archive
ouverte HAL Accéder directement au contenu Documentation FR Français (FR) Anglais (EN) …

[引用][C] Helium plasma modification of Si and Si3N4 thin films for advanced etch processes

V Martirosyan, E Despiau-Pujo, J Dubois… - Journal of Vacuum …, 2018 - cir.nii.ac.jp
Helium plasma modification of Si and Si<sub>3</sub>N<sub>4</sub> thin films for advanced
etch processes | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 …
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[PDF][PDF] Helium plasma modification of Si and Si 3 N 4 thin films for advanced etch processes

V Martirosyan, E Despiau-Pujo, J Dubois… - Journal of Vacuum …, 2018 - researchgate.net
To achieve the etching of silicon nitride spacers with a perfect anisotropy and an almost
infinite selectivity, an alternative method consisting of two sequential steps—surface …