A review of switching slew rate control for silicon carbide devices using active gate drivers

S Zhao, X Zhao, Y Wei, Y Zhao… - IEEE Journal of …, 2020 - ieeexplore.ieee.org
Driving solutions for power semiconductor devices are experiencing new challenges since
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …
被引用次数：128 相关文章

[引用][C] A Review of Switching Slew Rate Control for Silicon Carbide Devices Using Active Gate Drivers

S Zhao, X Zhao, Y Wei, Y Zhao… - IEEE Journal of Emerging …, 2021 - cir.nii.ac.jp
A Review of Switching Slew Rate Control for Silicon Carbide Devices Using Active Gate
Drivers | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索 …

A Review on Switching Slew Rate Control for Silicon Carbide Devices using Active Gate Drivers

S Zhao, X Zhao, Y Wei, Y Zhao… - IEEE Journal of Emerging …, 2020 - par.nsf.gov
Driving solutions for power semiconductor devices are experiencing new challenges since
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …