Investigation of semiconductors with defects using Raman scattering
LA Falkovsky - Physics-Uspekhi, 2004 - iopscience.iop.org
The influence of defects and carriers on lattice dynamics, especially on Raman scattering
from semiconductors and metals, is considered; a comparison of the theory with …
from semiconductors and metals, is considered; a comparison of the theory with …
Investigation of semiconductors with defects using Raman scattering
LA Falkovsky - Uspekhi Fizicheskikh Nauk, 2004 - ufn.ru
The influence of defects and carriers on lattice dynamics, especially on Raman scattering
from semiconductors and metals, is considered; a comparison of the theory with …
from semiconductors and metals, is considered; a comparison of the theory with …
REVIEWS OF TOPICAL PROBLEMS: Investigation of semiconductors with defects using Raman scattering
LA Falkovsky - Physics Uspekhi, 2004 - ui.adsabs.harvard.edu
The influence of defects and carriers on lattice dynamics, especially on Raman scattering
from semiconductors and metals, is considered; a comparison of the theory with …
from semiconductors and metals, is considered; a comparison of the theory with …
Investigation of semiconductors with defects using Raman scattering
LA Falkovsky - Uspekhi Fizicheskikh Nauk, 2004 - mathnet.ru
LA Falkovsky, “Investigation of semiconductors with defects using Raman scattering”, UFN,
174:3 (2004), 259–283; Phys. Usp., 47:3 (2004), 249–272 Uspekhi Fizicheskikh Nauk RUS …
174:3 (2004), 259–283; Phys. Usp., 47:3 (2004), 249–272 Uspekhi Fizicheskikh Nauk RUS …
[引用][C] Investigation of semiconductors with defects using Raman scattering
LA Falkovsky - Physics-Uspekhi, 2004 - elibrary.ru
Investigation of semiconductors with defects using Raman scattering
LA Falkovsky - Physics Uspekhi, 2004 - inis.iaea.org
[en] The influence of defects and carriers on lattice dynamics, especially on Raman
scattering from semiconductors and metals, is considered; a comparison of the theory with …
scattering from semiconductors and metals, is considered; a comparison of the theory with …
Investigation of semiconductors with defects using Raman scattering
LA Falkovsky - Physics Uspekhi, 2004 - osti.gov
The influence of defects and carriers on lattice dynamics, especially on Raman scattering
from semiconductors and metals, is considered; a comparison of the theory with …
from semiconductors and metals, is considered; a comparison of the theory with …
Investigation of semiconductors with defects using Raman scattering
LA Falkovsky - Uspekhi Fizicheskikh Nauk, 2004 - mathnet.ru
LA Falkovsky, “Investigation of semiconductors with defects using Raman scattering”, UFN, 174:3
(2004), 259–283; Phys. Usp., 47:3 (2004), 249–272 Uspekhi Fizicheskikh Nauk RUS ENG …
(2004), 259–283; Phys. Usp., 47:3 (2004), 249–272 Uspekhi Fizicheskikh Nauk RUS ENG …
Investigation of semiconductors with defects using Raman scattering
LA Falkovsky - Physics-Uspekhi, 2004 - ufn.ru
The influence of defects and carriers on lattice dynamics, especially on Raman scattering
from semiconductors and metals, is considered; a comparison of the theory with …
from semiconductors and metals, is considered; a comparison of the theory with …