GeS conducting-bridge resistive memory device with IGZO buffer layer for highly uniform and repeatable switching

A Ali, H Abbas, J Li, DS Ang - Applied Physics Letters, 2023 - pubs.aip.org
A double stacked monochalcogenide GeS-based conducting-bridge random access
memory (CBRAM) device with a IGZO buffer layer is investigated for highly improved …
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GeS conducting-bridge resistive memory device with IGZO buffer layer for highly uniform and repeatable switching

A Ali, H Abbas, J Li, DS Ang - Applied Physics Letters, 2023 - pubs.aip.org
ABSTRACT A double stacked monochalcogenide GeS-based conducting-bridge random
access memory (CBRAM) device with a IGZO buffer layer is investigated for highly improved …

GeS conducting-bridge resistive memory device with IGZO buffer layer for highly uniform and repeatable switching

A Ali, H Abbas, J Li, DS Ang - Applied Physics Letters, 2023 - dr.ntu.edu.sg
A double stacked monochalcogenide GeS-based conducting-bridge random access
memory (CBRAM) device with a IGZO buffer layer is investigated for highly improved …