Doping of III-nitride nanowires grown by molecular beam epitaxy

T Stoica, R Calarco - IEEE Journal of Selected Topics in …, 2011 - ieeexplore.ieee.org
III-nitride nanowires (NWs) were grown on Si (111) without catalyst by plasma-assisted
molecular-beam epitaxy under N-rich conditions. The influence of doping on the morphology …
被引用次数：58 相关文章
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[PDF][PDF] Doping of III-Nitride Nanowires Grown by Molecular Beam Epitaxy

T Stoica, R Calarco - IEEE JOURNAL OF SELECTED TOPICS IN …, 2011 - scholar.archive.org
III-nitride nanowires (NWs) were grown on Si (111) without catalyst by plasma-assisted
molecular-beam epitaxy under N-rich conditions. The influence of doping on the morphology …

Doping of III-Nitride Nanowires Grown by Molecular Beam Epitaxy

T Stoica, R Calarco - IEEE Journal of Selected Topics in Quantum …, 2011 - infona.pl
III-nitride nanowires (NWs) were grown on Si (111) without catalyst by plasma-assisted
molecular-beam epitaxy under N-rich conditions. The influence of doping on the morphology …

Doping of III-Nitride Nanowires Grown by Molecular Beam Epitaxy

T Stoica, R Calarco - IEEE journal of selected topics in quantum …, 2011 - juser.fz-juelich.de
III-nitride nanowires (NWs) were grown on Si (111) without catalyst by plasma-assisted
molecular-beam epitaxy under N-rich conditions. The influence of doping on the morphology …

[引用][C] Doping of III-Nitride Nanowires Grown by Molecular Beam Epitaxy

T Stoica, R Calarco - IEEE Journal of Selected Topics in …, 2011 - ui.adsabs.harvard.edu
Doping of III-Nitride Nanowires Grown by Molecular Beam Epitaxy - NASA/ADS Now on
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