Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD
S Hasenöhrl, E Dobročka, MP Chauvat, A Minj… - Journal of Applied …, 2019 - pubs.aip.org
Two I nx A l 1− x N layers were grown simultaneously on different substrates [sapphire
(0001) and the Ga-polar GaN template], but under the same reactor conditions, they were …
(0001) and the Ga-polar GaN template], but under the same reactor conditions, they were …
[引用][C] Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD
P Chauhan, S Hasenöhrl, E Dobročka… - Journal of Applied …, 2019 - hal.science
Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN
buffer layer by OMCVD - Archive ouverte HAL Accéder directement au contenu Documentation …
buffer layer by OMCVD - Archive ouverte HAL Accéder directement au contenu Documentation …
Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD
P Chauhan, S Hasenöhrl, E Dobročka… - Journal of Applied …, 2019 - pubs.aip.org
ABSTRACT Two InxAl1ÀxN layers were grown simultaneously on different substrates
[sapphire (0001) and the Ga-polar GaN template], but under the same reactor conditions …
[sapphire (0001) and the Ga-polar GaN template], but under the same reactor conditions …
Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD
P Chauhan, S Hasenöhrl… - Journal of …, 2019 - research-information.bris.ac.uk
Two I nx A l 1-x N layers were grown simultaneously on different substrates [sapphire (0001)
and the Ga-polar GaN template], but under the same reactor conditions, they were employed …
and the Ga-polar GaN template], but under the same reactor conditions, they were employed …
[PDF][PDF] Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD
P Chauhan, S Hasenöhrl, E Dobročka, MP Chauvat… - 2019 - lirias.kuleuven.be
ABSTRACT Two InxAl1ÀxN layers were grown simultaneously on different substrates
[sapphire (0001) and the Ga-polar GaN template], but under the same reactor conditions …
[sapphire (0001) and the Ga-polar GaN template], but under the same reactor conditions …
[PDF][PDF] Gucmann, F.,... Kuzmík, J.(2019). Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD. Journal …
P Chauhan, S Hasenöhrl, E Dobroka, MP Chauvat… - core.ac.uk
ABSTRACT Two In𝑥Al1− 𝑥N layers were grown simultaneously on different substrates
(sapphire (0001) and Ga-polar GaN template) but under the same reactor conditions were …
(sapphire (0001) and Ga-polar GaN template) but under the same reactor conditions were …
Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD
P Chauhan, S Hasenöhrl, E Dobročka… - Journal of Applied …, 2019 - ui.adsabs.harvard.edu
Two I nx A l 1-x N layers were grown simultaneously on different substrates [sapphire (0001)
and the Ga-polar GaN template], but under the same reactor conditions, they were employed …
and the Ga-polar GaN template], but under the same reactor conditions, they were employed …