Quantum dot infrared photodetectors

HC Liu, M Gao, ZR Wasilewski, S Fafard - Applied Physics Letters, 2001 - pubs.aip.org
Self-assembled strained semiconductor nanostructures have been grown on GaAs
substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence …
被引用次数：406 相关文章

Quantum dot infrared photodetectors

HC Liu, M Gao, J McCaffrey, ZR Wasilewski… - Applied Physics …, 2001 - aip.scitation.org
Self-assembled strained semiconductor nanostructures have been grown on GaAs
substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence …

Quantum dot infrared photodetectors

HC Liu, M Gao, J McCaffrey… - Applied Physics …, 2001 - ui.adsabs.harvard.edu
Self-assembled strained semiconductor nanostructures have been grown on GaAs
substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence …

[引用][C] Quantum dot infrared photodetectors

HC Liu, M Gao, J McCaffrey, ZR Wasilewski… - Applied Physics …, 2001 - cir.nii.ac.jp

Quantum dot infrared photodetectors

HC Liu, M Gao, J McCaffrey, ZR Wasilewski… - APPLIED PHYSICS …, 2001 - pubs.aip.org
Self-assembled strained semiconductor nanostructures have been grown on GaAs
substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence …

[引用][C] Quantum-Dot Infrared Photodetectors

SY Lin, ST Chou - 2007 - ir.sinica.edu.tw
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