[HTML][HTML] Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET
In this paper, different physical models of single trap defects are considered, which are
localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors …
localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors …
Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET
AE Atamuratov, MM Khalilloev, A Yusupov… - minerva.usc.es
In this paper, different physical models of single trap defects are considered, which are
localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors …
localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors …
Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET.
AE Atamuratov, MM Khalilloev… - Applied Sciences …, 2020 - search.ebscohost.com
In this paper, different physical models of single trap defects are considered, which are
localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors …
localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors …
[PDF][PDF] Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET
AE Atamuratov, MM Khalilloev, A Yusupov… - pdfs.semanticscholar.org
In this paper, different physical models of single trap defects are considered, which are
localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors …
localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors …
[引用][C] Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET
AE Atamuratov, MM Khalilloev, A Yusupov… - Applied Sciences …, 2020 - jglobal.jst.go.jp
Contribution to the Physical Modelling of Single Charged Defects Causing the Random
Telegraph Noise in Junctionless FinFET | Article Information | J-GLOBAL Art J-GLOBAL ID:202102257758294431 …
Telegraph Noise in Junctionless FinFET | Article Information | J-GLOBAL Art J-GLOBAL ID:202102257758294431 …
Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET
AE Atamuratov, MM Khalilloev, A Yusupov… - Applied …, 2020 - search.proquest.com
In this paper, different physical models of single trap defects are considered, which are
localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors …
localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors …
Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET
AE Atamuratov, MM Khalilloev, A Yusupov… - 2020 - agris.fao.org
In this paper, different physical models of single trap defects are considered, which are
localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors …
localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors …
[PDF][PDF] Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET
AE Atamuratov, MM Khalilloev, A Yusupov… - academia.edu
In this paper, different physical models of single trap defects are considered, which are
localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors …
localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors …
[引用][C] Contribution to the physical modelling of single charged defects causing the random telegraph noise in junctionless FinFET
AE Atamuratov, MM Khalilloev, A Yusupov… - Applied Sciences …, 2020 - elibrary.ru
[PDF][PDF] Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET
AE Atamuratov, MM Khalilloev, A Yusupov… - academia.edu
In this paper, different physical models of single trap defects are considered, which are
localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors …
localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors …