Effect of different pulse modes during Cl2/Ar inductively coupled plasma etching on the characteristics of nanoscale silicon trench formation

HJ Kim, L Wen, D San Kim, KH Kim, JW Hong… - Applied Surface …, 2022 - Elsevier
The etch characteristics of silicon trenches masked with various SiO 2/Si 3 N 4 pattern
distances were investigated using synchronously and asynchronously pulse modes in …
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[PDF][PDF] Effect of different pulse modes during Cl2/Ar inductively coupled plasma etching on the characteristics of nanoscale silicon trench formation

HJ Kim, L Wen, D San Kim, KH Kim, JW Hong… - Applied Surface …, 2022 - swb.skku.edu
The etch characteristics of silicon trenches masked with various SiO2/Si3N4 pattern
distances were investigated using synchronously and asynchronously pulse modes in …

Effect of different pulse modes during Cl2/Ar inductively coupled plasma etching on the characteristics of nanoscale silicon trench formation

HJ Kim, L Wen, DS Kim, KH Kim… - Applied Surface …, 2022 - ui.adsabs.harvard.edu
The etch characteristics of silicon trenches masked with various SiO 2/Si 3 N 4 pattern
distances were investigated using synchronously and asynchronously pulse modes in …

Effect of different pulse modes during Cl2/Ar inductively coupled plasma etching on the characteristics of nanoscale silicon trench formation

HJ Kim, L Wen, DS Kim, KH Kim… - Applied Surface …, 2022 - scholarworks.bwise.kr
The etch characteristics of silicon trenches masked with various SiO2/Si3N4pattern
distances were investigated using synchronously and asynchronously pulse modes in …