Annealing-Induced Group V Intermixing in InAs∕ InP Quantum Dots Probed by Micro-Raman Spectroscopy

S Tripathy, CK Chia, JR Dong… - Electrochemical and Solid …, 2005 - iopscience.iop.org
Post-growth intermixing by rapid thermal annealing in self-assembled quantum dot (QD)
structures with and without capping has been investigated. Room-temperature …
被引用次数：5 相关文章

Annealing-induced group v intermixing in InAs/InP quantum dots probed by micro-Raman spectroscopy

S Tripathy, CK Chia, JR Dong, SJ Chua - 2005 - scholarbank.nus.edu.sg
Post-growth intermixing by rapid thermal annealing in self-assembled InAs/InP quantum dot
(QD) structures with and without SiO 2 capping has been investigated. Room-temperature …