Scanning spreading resistance microscopy current transport studies on doped semiconductors

RP Lu, KL Kavanagh, SJ Dixon-Warren… - Journal of Vacuum …, 2002 - pubs.aip.org
Two-dimensional (2D) carrier concentration profiling using scanning spreading resistance
microscopy (SSRM) has been carried out on molecular beam epitaxy-grown GaAs and InP …
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[PDF][PDF] Scanning spreading resistance microscopy current transport studies on doped III–V semiconductors

RP Lu, KL Kavanagh, DW St J, AJ SpringThorpe… - researchgate.net
Two-dimensional (2D) carrier concentration profiling using scanning spreading resistance
microscopy (SSRM) 1 on III–V optoelectronic devices has been demonstrated, but with …

Scanning spreading resistance microscopy current transport studies on doped III–V semiconductors

RP Lu, KL Kavanagh, SJ Dixon-Warren… - Journal of Vacuum …, 2002 - pubs.aip.org
Two-dimensional (2D) carrier concentration profiling using scanning spreading resistance
microscopy (SSRM) has been carried out on molecular beam epitaxy-grown GaAs and InP …

Scanning spreading resistance microscopy current transport studies on doped III–V semiconductors

RP Lu, KL Kavanagh… - Journal of Vacuum …, 2002 - ui.adsabs.harvard.edu
Abstract Two-dimensional (2D) carrier concentration profiling using scanning spreading
resistance microscopy (SSRM) has been carried out on molecular beam epitaxy-grown …