Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation

P Jóźwik, JPS Cardoso, DF Carvalho… - Physical Chemistry …, 2022 - pubs.rsc.org
350 nm and 550 nm thick InGaN/GaN bilayers were irradiated with different energies (from∼
82 to∼ 38 MeV) of xenon (129Xe) ions and different fluences of 1.2 GeV lead (208Pb) ions …
被引用次数：3 相关文章

Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation.

P Jóźwik, JPS Cardoso, DF Carvalho… - Physical Chemistry …, 2022 - europepmc.org
350 nm and 550 nm thick InGaN/GaN bilayers were irradiated with different energies (from∼
82 to∼ 38 MeV) of xenon (129 Xe) ions and different fluences of 1.2 GeV lead (208 Pb) ions …

Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation

P Jóźwik, JPS Cardoso, DF Carvalho… - Physical chemistry …, 2022 - pubmed.ncbi.nlm.nih.gov
350 nm and 550 nm thick InGaN/GaN bilayers were irradiated with different energies (from∼
82 to∼ 38 MeV) of xenon (129 Xe) ions and different fluences of 1.2 GeV lead (208 Pb) ions …

Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation

P Jóźwik, J Cardoso, D Carvalho, M Correia… - Physical Chemistry …, 2022 - hal.science
Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation - Archive ouverte
HAL Accéder directement au contenu Documentation FR Français (FR) Anglais (EN) Se …

Damage in InGaN/GaN bilayers upon Xe and Pb swift heavy ion irradiation

P Jóźwik, JPS Cardoso, DF Carvalho… - Physical Chemistry …, 2022 - ui.adsabs.harvard.edu
Abstract 350 nm and 550 nm thick InGaN/GaN bilayers were irradiated with different
energies (from∼ 82 to∼ 38 MeV) of xenon (129Xe) ions and different fluences of 1.2 GeV …