Data-pattern-aware error prevention technique to improve system reliability

J Guo, D Wang, Z Shao, Y Chen - IEEE Transactions on Very …, 2017 - ieeexplore.ieee.org
Program disturb, read disturb, and retention time noise are identified as three major
contributors to multilevel cell (MLC) NAND flash memory bit errors. With program/erase …
被引用次数：14 相关文章

Data-Pattern-Aware Error Prevention Technique to Improve System Reliability

J Guo, D Wang, Z Shao, Y Chen - IEEE Transactions on Very Large …, 2017 - computer.org
Program disturb, read disturb, and retention time noise are identified as three major
contributors to multilevel cell (MLC) NAND flash memory bit errors. With program/erase …

Data-Pattern-Aware Error Prevention Technique to Improve System Reliability

J Guo, D Wang, Z Shao, Y Chen - … on Very Large Scale Integration (VLSI …, 2017 - dl.acm.org
Program disturb, read disturb, and retention time noise are identified as three major
contributors to multilevel cell (MLC) NAND flash memory bit errors. With program/erase …
[PDF] ieee.org

[PDF][PDF] DPA: Data Pattern Aware Error Prevention Technique to Improve System Reliability

J Guo, D Wang, Z Shao, Y Chen - ieeexplore.ieee.org
Program disturb, read disturb, and retention time noise are identified as three major
contributors to MLC NAND flash memory bit errors. With P/E cycling and technology scaling …

Data-Pattern-Aware Error Prevention Technique to Improve System Reliability

J Guo, D Wang, Z Shao, Y Chen - IEEE Transactions on Very …, 2017 - research.polyu.edu.hk
Program disturb, read disturb, and retention time noise are identified as three major
contributors to multilevel cell (MLC) NAND flash memory bit errors. With program/erase …