[HTML][HTML] Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET
F Zhang, Y Wang, Y Liu, M Wu, Z Zhou - Electronics, 2023 - mdpi.com
As the manufacturing process level of semiconductor devices continues to improve, the
device size gradually decreases, and the devices are affected by the single event effect …
device size gradually decreases, and the devices are affected by the single event effect …
Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET.
F Zhang, Y Wang, Y Liu, M Wu… - Electronics (2079 …, 2023 - search.ebscohost.com
As the manufacturing process level of semiconductor devices continues to improve, the
device size gradually decreases, and the devices are affected by the single event effect …
device size gradually decreases, and the devices are affected by the single event effect …
Investigation of Incident Angle Dependence of Single Event Transient Model in MOSFET
F Zhang, Y Wang, Y Liu, M Wu, Z Zhou - Electronics, 2023 - search.proquest.com
As the manufacturing process level of semiconductor devices continues to improve, the
device size gradually decreases, and the devices are affected by the single event effect …
device size gradually decreases, and the devices are affected by the single event effect …