Empirical device scaling and RF performance perspective: A small signal model for GaN high electron mobility transistor
The paper proposes scaling effect of number of fingers (N) and effective gate width (w eff) on
model parameters and subsequently investigate the effect on RF performance …
model parameters and subsequently investigate the effect on RF performance …
[引用][C] Empirical Device Scaling and RF Performance Perspective: A Small Signal Model for GaN High Electron Mobility Transistor
A Khusro, AQ Ansari, MS Hashmi - … of the 2nd International Conference on …, 2018 - elibrary.ru
ACKNOWLEDGMENT This work is supported in parts by the Ministry of Electronics and IT,
Government of India under Visvesvaraya Ph. D. Scheme. The authors would also like to …
Government of India under Visvesvaraya Ph. D. Scheme. The authors would also like to …
[引用][C] Empirical Device Scaling and RF Performance Perspective: A Small Signal Model for GaN High Electron Mobility Transistor
A Khusro, M Hashmi, AQ Ansari - 2nd International Conference …, 2018 - research.nu.edu.kz
Empirical Device Scaling and RF Performance Perspective: A Small Signal Model for GaN
High Electron Mobility Transistor — Nazarbayev University Skip to main navigation Skip to …
High Electron Mobility Transistor — Nazarbayev University Skip to main navigation Skip to …
[PDF][PDF] Empirical Device Scaling and RF Performance Perspective: A Small Signal Model for GaN High Electron Mobility Transistor
A Khusro, MS Hashmi, K Astana, AQ Ansari - researchgate.net
The paper proposes scaling effect of number of fingers (N) and effective gate width (weff) on
model parameters and subsequently investigate the effect on RF performance …
model parameters and subsequently investigate the effect on RF performance …