Coexistence of analog and digital resistive switching in BiFeO3-based memristive devices

T Shi, R Yang, X Guo - Solid State Ionics, 2016 - Elsevier
The resistive switching behavior of polycrystalline BiFeO 3 films was investigated, and the
coexistence of analog and digital resistive switching behaviors in a single Pt/BiFeO 3/Pt …
被引用次数：59 相关文章

Coexistence of analog and digital resistive switching in BiFeO3-based memristive devices

T Shi, R Yang, X Guo - Solid State Ionics, 2016 - infona.pl
The resistive switching behavior of polycrystalline BiFeO3 films was investigated, and the
coexistence of analog and digital resistive switching behaviors in a single Pt/BiFeO3/Pt …

[引用][C] Coexistence of analog and digital resistive switching in BiFeO3-based memristive devices

T Shi, R Yang, X Guo - Solid State Ionics, 2016 - cir.nii.ac.jp
Coexistence of analog and digital resistive switching in BiFeO3-based memristive devices |
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