Ion implantation damage annealing in 4H-SiC monitored by scanning spreading resistance microscopy
A Suchodolskis - Thin Solid Films, 2006 - Elsevier
To obtain a better understanding of the damage annealing process and dopant defect
incorporation and activation we have implanted epitaxially grown 4H-SiC layers with high …
incorporation and activation we have implanted epitaxially grown 4H-SiC layers with high …
[引用][C] Ion implantation damage annealing in 4H-SiC monitored by scanning spreading resistance microscopy
A Suchodolskis, A Hallen, M Linnarsson… - Thin Solid …, 2006 - ui.adsabs.harvard.edu
Ion implantation damage annealing in 4H-SiC monitored by scanning spreading resistance
microscopy - NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS …
microscopy - NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS …
Ion implantation damage annealing in 4H-SiC monitored by scanning spreading resistance microscopy
A Suchodolskis, A Hallen, MK Linnarsson, J Osterman… - Thin Solid Films, 2006 - osti.gov
To obtain a better understanding of the damage annealing process and dopant defect
incorporation and activation we have implanted epitaxially grown 4H-SiC layers with high …
incorporation and activation we have implanted epitaxially grown 4H-SiC layers with high …
Ion implantation damage annealing in 4H-SiC monitored by scanning spreading resistance microscopy
A Suchodolskis, A Hallen, MK Linnarsson… - Thin Solid …, 2006 - inis.iaea.org
[en] To obtain a better understanding of the damage annealing process and dopant defect
incorporation and activation we have implanted epitaxially grown 4H-SiC layers with high …
incorporation and activation we have implanted epitaxially grown 4H-SiC layers with high …
Ion implantation damage annealing in 4H-SiC monitored by scanning spreading resistance microscopy
A Suchodolskis, A Hallén, MK Linnarsson, J Österman… - Thin Solid Films, 2006 - infona.pl
To obtain a better understanding of the damage annealing process and dopant defect
incorporation and activation we have implanted epitaxially grown 4H-SiC layers with high …
incorporation and activation we have implanted epitaxially grown 4H-SiC layers with high …
[引用][C] Ion implantation damage annealing in 4H-SiC monitored by scanning spreading resistance microscopy
A SUCHODOLSKIS, A HALLDN… - Thin solid …, 2006 - pascal-francis.inist.fr
Ion implantation damage annealing in 4H-SiC monitored by scanning spreading resistance
microscopy CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic Databases …
microscopy CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic Databases …
Ion implantation damage annealing in 4H-SiC monitored by scanning spreading resistance microscopy
A Suchodolskis, A Hallén, MK Linnarsson… - Thin Solid …, 2006 - diva-portal.org
To obtain a better understanding of the damage annealing process and dopant defect
incorporation and activation we have implanted epitaxially grown 4H-SiC layers with high …
incorporation and activation we have implanted epitaxially grown 4H-SiC layers with high …