Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs

M Longo, A Carbognani, C Bocchi, E Gombia - Journal of crystal growth, 2003 - Elsevier
Homoepitaxial GaAs layers were grown by low-pressure metalorganic vapor phase epitaxy
(MOVPE), by using the metalorganic precursors trimethylgallium (TMGa) and the low …
被引用次数：37 相关文章

Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs

M Longo, R Magnanini, A Parisini… - Journal of Crystal …, 2003 - ui.adsabs.harvard.edu
Homoepitaxial GaAs layers were grown by low-pressure metalorganic vapor phase epitaxy
(MOVPE), by using the metalorganic precursors trimethylgallium (TMGa) and the low …

Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs

M Longo, R Magnanini, A Parisini… - JOURNAL OF …, 2003 - art.torvergata.it
Homoepitaxial GaAs layers were grown by low-pressure metalorganic vapor phase epitaxy
(MOVPE), by using the metalorganic precursors trimethylgallium (TMGa) and the low …

Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs

M Longo, R Magnanini, A Parisini, L Tarricone… - Journal of Crystal …, 2003 - infona.pl
Homoepitaxial GaAs layers were grown by low-pressure metalorganic vapor phase epitaxy
(MOVPE), by using the metalorganic precursors trimethylgallium (TMGa) and the low …

[引用][C] Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs

M Longo, R Magnanini, A Parisini, L Tarricone… - JOURNAL OF …, 2003 - air.unipr.it
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs
IRIS IRIS Home Sfoglia Macrotipologie & tipologie Autore Titolo Riviste Serie IT Italiano Italiano …

[引用][C] Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs

M LONGO, R MAGNANINI, A PARISINI… - Journal of crystal …, 2003 - pascal-francis.inist.fr
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs
CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic Databases Simple …

[引用][C] Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs

M Longo, R Magnanini, A Parisini, L Tarricone… - Journal of Crystal …, 2003 - cir.nii.ac.jp
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs |
CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ …

[引用][C] Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs

M LONGO, R MAGNANINI, A PARISINI… - Journal of crystal …, 2003 - Elsevier