An analysis of the strain in an axial nanowire superlattice shows that the dominating strain
state can be defined arbitrarily between unstrained and maximum mismatch strain by …

We demonstrate the selective area growth of GaN–(Al, Ga) N core–shell nanowire
heterostructures directly on Si (111). Photoluminescence spectroscopy on as-grown …

We study the three-dimensional deformation field induced by an axial (In, Ga) N segment in
a GaN nanowire. Using the finite element method within the framework of linear elasticity …

Abstract Growing an InxGa1− xN/GaN (InGaN/GaN) multi‐quantum well (MQW)
heterostructure in nanowire (NW) form is expected to overcome limitations inherent in light …

We report the demonstration of an ultra-sensitive Raman probing of single GaN/AlN
nanowires (NWs). The high sensitivity of the Raman scattering by longitudinal optical …

We investigate the strain state of ensembles of thin and nearly coalescence-free self-
assembled GaN nanowires prepared by plasma-assisted molecular beam epitaxy on Ti/Al 2 …

Strained InGaN/GaN core-shell nanowires (NWs) are promising candidates for solid state
lighting applications due to their superior properties compared to planar films. NW based …

Strain distribution and interface modulation of highly lattice-mismatched InN/GaN
heterostructure nanowires | Applied Physics Letters | AIP Publishing Skip to Main Content …

The structural properties and the strain state of InGaN/GaN superlattices embedded in GaN
nanowires were analyzed as a function of superlattice growth temperature, using …

We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires
are grown by molecular beam epitaxy on a Si (111) substrate in a self-organized manner …