In this paper, a small signal model of SOI MOSFET operating in the inversion region is
developed, taking into account the distributed nature of the gate structure. Because the width …

A small-signal model based on technological parameters is validated by measurements for
thin-film fully-depleted silicon-on-insulator nMOSFETs. The model is used to evaluate the …

Alternative Architectures of SOI MOSFET for Improving DC and Microwave Characteristics
Page 1 ALTERNATIVE ARCHITECTURES OF SOI MOSFET FOR IMPROVING DC AND …

Silicon MOSFETs have the potential for application to a broad range of emerging microwave
integrated circuit applications. However, current device technologies were developed for …

Silicon-on-insulator technology has been under development for more than three decades.
Interest in thin-film SOI for high performance applications dates back from the late 70's, when …

The new communication markets are vey demanding: high frequency, high degree of
integration, low power consumption. Silicon-on-Insulator offers many advantages and this …

Summary form only given. Recently, it has been demonstrated that the use of high-resistivity
SOI (SIMOX) substrates (5,000 and 10,000/spl Omega/. cm) yields MOSFETs which offer …

The increasing high frequency capabilities of CMOS have resulted in increased RF and
analog design in CMOS. Design of RF and analog circuits depends critically on device S …

A small‐signal analytical MOSFET model suitable for microwave frequency applications is
presented. The effect of parasitic elements, the fringing‐field effect, and distributed‐gate …

This paper presents the first results of lateral SOI power MOSFETs for RF applications in a
modified 1.2-/spl mu/m CMOS technology. Fabricated 30-V devices achieved an f/sub T/of …