Two I nx A l 1− x N layers were grown simultaneously on different substrates [sapphire
(0001) and the Ga-polar GaN template], but under the same reactor conditions, they were …

The growth of m-plane In x A 1-x N (0.34< x< 0.89) films was achieved using ZnO (1100)
substrates and pulsed-laser-deposited room-temperature-commensurate GaN buffer layers …

Metalorganic chemical vapor deposition of approximately 300-nm thick epitaxial AlInN films
with different alloy compositions was performed using a semi-relaxed c-plane GaInN …

InAlN as a functional inorganic material is a promising alternative to the commonly used
InGaN in tunnel diodes and optoelectronic devices, due to its tunable wider range of energy …

The strain state and composition of a 400 nm thick (In, Ga) N layer grown by metal-organic
chemical vapor deposition on a GaN template are investigated by spatially integrated x-ray …

In x Al 1− x N layers, with 0.09≤ x≤ 0.23⁠, were grown on GaN on both the In-polar and N-
polar orientations by metal organic chemical vapor deposition. The impact of growth …

Abstract Thick (> 150 nm) I nx A l 1-x N layers were grown on GaN/sapphire (0 0 0 1) by
organometallic vapor phase epitaxy. Growth temperature of I nx A l 1-x N layers was …

The effect of growth pressure on defect formation in InAlN epilayers grown on GaN/sapphire
templates by metal–organic chemical vapor deposition was systematically investigated in …

Thick InAlN layers (In-molar fraction> 0.37) on GaN buffer layers were prepared using a
close-coupled showerhead metalorganic chemical vapor deposition (MOCVD) reactor. This …

N-polar InAlN thin films were grown by plasma-assisted molecular beam epitaxy on
freestanding GaN substrates under N-rich conditions. Indium and aluminum fluxes were …