3 Physics of semiconductor photonics 25 3.1 Hamiltonian of a particle in a crystal 25 3.2
Energy band structure and free particle with effective mass 26 3.3 Perturbation of the one …

The application of external pressure on a heterostructure produces changes in the lattice
parameter and symmetry of the material. These in turn produce significant changes in the …

The electronic and optical properties of GaAs-based Type-I n-Al 0.45 Ga 0.55 As/GaAs 0.84
P 0.16/p-Al 0.45 Ga 0.55 As quantum well heterostructure have been investigated. The …

This paper presented a detailed analysis and up-to-date performance evaluation using the
band parameters for the technologically important III–V compound semiconductors …

High-power diffraction-limited phase-locked gallium-arsenide (GaAs)/gallium-aluminum-
arsenide (GaAlAs) semiconductor laser arrays have been fabricated using the LPE …

Optical transition strength are observed to be affected in Al 0.8 Ga 0.2 As/GaAs 0.8 P 0.2
type-I QW-heterostructure under external electric field. This paper reports optical gain …

The application of external pressure on a heterostructure produces changes in the lattice
parameter and symmetry of the material. These in turn produce significant changes in the …

This thesis describes several semiconductor injection laser diodes and related
optoelectronic devices that can be used as light sources for optical communication systems …

Photonic integrated circuits may be implemented in a variety of material systems. e high-
speed optical modulator is a primary component, thus the material must have suitable …

The authors experimentally demonstrate the operation of a fully integrated optoelectronic
circuit with optical input and output consisting of a pin photodetector and load resistor, a …