We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes
grown by metal organic chemical vapor deposition using selective area epitaxy technique …

III-V semiconductor nanowire infrared light emitting diodes (LEDs) have great potential for
the development of Si-based integrated photonics. In this paper, we report the growth of …

Miniaturized light sources at telecommunication wavelengths are essential components for
on-chip optical communication systems. Here, we report the growth and fabrication of highly …

III‐V semiconductor nanowires with quantum wells (QWs) are promising for ultra‐compact
light sources and photodetectors from visible to infrared spectral region. However, most of …

Semiconductor nanowires (NWs), which have nanoscale footprints, enable us to realize
various quantum structures with excellent position and size controllability, utilizing a wide …

Nanowires have the potential to play an important role for next-generation light-emitting
diodes. In this work, we present a growth scheme for radial nanowire quantum-well …

Semiconducting nanowires (NWs) fabricated from III–V materials have gained significant
attention for their application in advanced optoelectronic devices. Here, the growth of …

InGaAs/InP multi-quantum-well nanowires were directly grown on the v-groove-patterned
SOI substrate by metal organic chemical vapor deposition. The surface morphology of the …

III–V semiconductor multi-quantum-well nanowires (MQW NWs) via selective-area epitaxy
(SAE) is of great importance for the development of nanoscale light-emitting devices for …

The usability and tunability of the essential InP–InGaAs material combination in nanowire-
based quantum wells (QWs) are assessed. The wurtzite phase core-multi-shell InP–InGaAs …