The photorefractive effect was observed in He-ion-implanted semi-insulating GaN film in the
UV spectral region. The photorefractive grating is induced by the electroabsorption effect …

The photorefractive effect was observed in Fe-doped semi-insulating GaN. We measured
the two-beam coupling constant and the grating formation time as a function of pump …

Photoreflectance was used to study the optical properties of single crystal hexagonal GaN
films on (0001) sapphire substrate grown by metalorganic chemical vapor deposition. The …

Photorefractive effect and photochromism in Fe doped GaN Page 1 Photorefractive effect and
photochromism in Fe doped GaN Haruki Kiyama, Ryushi Fujimura, Tsutomu Shimura, and …

Room temperature contactless electroreflectance (CER) spectroscopy has been applied to
study the energy gap, optical quality, and band bending for n-type and semi-insulating GaN …

GaN films with Ga or N face and of n-or p-type doping were grown by plasma-assisted
molecular-beam epitaxy. The wurtzite GaN exhibits a large polarization, with spontaneous …

The optical properties of c‐plane GaN layers grown by molecular beam epitaxy on a‐plane
sapphire substrate are investigated. Polarization‐dependent photoreflectance spectroscopy …

We report on the room temperature optical characterization of single crystal hexagonal GaN
films on (0001) sapphire grown by metalorganic chemical vapor deposition. The energy gap …

The room temperature photoreflectance (PR) spectroscopy was used to investigate thick
GaN epitaxial layers. The GaN layers were grown by hydride vapour phase epitaxy (HVPE) …

The analysis of transient photoinduced subgap photoreflectance under optical pumping
conditions in double heterostructure Al0. 18Ga0. 82N/GaN layers led to the observation of a …