Some recent advances in the understanding of the electronic structure of bond excitons (BE:
s) in semiconductors are discussed, with the emphasis on properties of complex defects or …

The magnetic properties of an electron-hole pair bound to complex neutral defects in
semiconductors are discussed and compared to experimental data for both direct-and …

The localisation energy of excitons bound to neutral donors and acceptors is studied using
Green function and configuration interaction techniques. The configuration interaction …

An effective-mass equation for the hole binding energy of an acceptorlike bound exciton in
semiconductors is developed. The motion of the electron is represented by an effective …

The quantum-mechanical variational theorem is used to study the conditions under which an
exciton can be bound to a Coulomb center in a semiconductor. The model used is that in …

Shallow defects in semiconductors are of major importance, both scientifically and
technologically. These include donors, acceptors, isoelectronic impurities and various …

It is shown that the complex consisting of an exciton bound to a neutral donor (or acceptor) is
not always stable. There is an intermediate range of values of the electron to hole effective …

A new method to investigate the direct-exciton spectrum in semiconductors with degenerate
bands is described. This method, which sloves the effective-mass Hamiltonian using …

The development of optical spectroscopy as a tool to study the properties of defects in
semiconductors took a major step forward in the beginning of the 1960s when lasers …

1006 A. WlE YER AND%. H. YOUNG 184 as with the work of Ihornton et al., the energy
depend-ence should also, in principle, be incorporated. At the present time such a program …