We measure the dephasing time of the exciton ground-state transition in In 1− x Ga x As
quantum dots using a sensitive four-wave mixing technique. We find experimental evidence …

The room-temperature dephasing in InAs/GaAs self-assembled quantum dots is measured
using two independent methods: spectal-hole burning and four-wave mixing. Dephasing …

We measure the dephasing time of ground-state excitonic transitions in InGaAs quantum
dots under electrical injection in the temperature range from 10 to 70 K. Electrical injection …

We report systematic measurements of the dephasing of the excitonic ground-state transition
in a series of InGaAs∕ GaAs quantum dots having different quantum confinement …

We measure a dephasing time of several hundred picoseconds at low temperature in the
ground-state transition of strongly confined InGaAs quantum dots, using a highly sensitive …

Carrier relaxation and recombination in self-organized InAs/GaAs quantum dots (QD's) is
investigated by photoluminescence (PL), PL excitation (PLE), and time-resolved PL …

We present measurements and calculations of optical Rabi oscillations in the excitonic
ground-state transition of an InGaAs quantum dot ensemble at low temperature. Rabi …

Single dot photoluminescence spectroscopy was used to study the homogeneous linewidth
Γ of the ground-state exciton in In 0.60 Ga 0.40 As/GaAs quantum dots as function of …

We present experimental results concerning optical transitions and carrier dynamics
(capture and relaxation) in self assembled InAs/GaAs quantum dot structures grown by …

We report temperature-dependent photoluminescence on neutral and charged excitons in
individual InAs quantum dots. We find narrow emission lines for temperatures up to 30 K for …