The present study focuses on state-of-the-art of the demand, operating principles, design
parameters, different materials for beam and dielectric, already existing technologies and …

High isolation and low insertion loss are the key design parameters for the NEMS switch at
high frequency. The comprehensive study of radio frequency (RF) performance analysis of …

The modelling and simulation of nanoelectromechanical (NEM) switch is indispensable to
get optimum device dimensions. The present work deals with the design and simulation of …

In this work, modeling, simulation and analysis of a contact type RF nano-electromechanical
switches (RF-NEMS) with very low actuation voltage and enhanced RF-performance is …

It is generally accepted that electromechanical switches have superior off-to-on resistance
ratios, very low leakage currents, and sub-threshold slope better than 0.1 mV/decade. It is …

The present work deals with 3D modeling of a novel configuration of a double clamped
nanoelectromechanical (NEM) capacitive switch. In the proposed work, graphene oxide …

Electrostatically actuated nanobeam-based electromechanical switches have shown
promise for versatile novel applications, such as low power devices. However, their …

III-Nitride heterostructure field-effect transistors (HFETs) demonstrated a new paradigm in
microwave switching and control applications due to unique combination of extremely low …

This letter describes the design and fabrication of a high-linearity GaN PIN MMIC switch. In
order to achieve good input/output matching and high-linearity characteristics at the K-band …

We report the insertion loss and linearity characteristics of novel microwave switches based
on III‐Nitride heterostructure field‐effect transistors (HFETs) and Metal‐Oxide …