An 80 GHz power amplifier with 17.4 dBm output power and 18% PAE in 22 nm FD-SOI CMOS for binary-phase modulated radars

S Li, M Cui, X Xu, L Szilagyi, C Carta… - 2020 IEEE Asia …, 2020 - ieeexplore.ieee.org
This work presents a power amplifier operating from 75 GHz to 85 GHz and integrated with a
binary phase modulator in a 22 nm FD-SOI technology. The circuit can serve directly as a …

A 20.7% PAE 3-stage 60GHz power amplifier for radar applications in 28nm bulk CMOS

R Ciocoveanu, R Weigel, A Hagelauer… - 2019 14th European …, 2019 - ieeexplore.ieee.org
This paper presents a highly efficient 3-stage differential Class-B power amplifier (PA) for
short range radar applications, realized in a 28 nm bulk CMOS technology. Measurement …

A C-band FMCW Radar Transmitter with a 22 dBm Output Power Series-stacking CMCD PA for Long-distance Detection in 180-nm CMOS Technology

X Huang, W Deng, H Jia, Y Wei… - … on Integrated Circuits …, 2021 - ieeexplore.ieee.org
A 4.1-to-4.5 GHz FMCW radar transmitter suitable for long-distance detection using 180-nm
CMOS process is introduced in this paper. The chirp signal generator is realized by an open …

A 28-GHz High Linearity and High Efficiency Class-F Power Amplifier in 90-nm CMOS Process for 5G Communications

BZ Lu, Y Wang, ZJ Huang, KY Lin… - 2020 15th European …, 2021 - ieeexplore.ieee.org
A 28-GHz Class-F power amplifier fabricated in 90-nm CMOS process for 5G
communications is presented in this paper. This PA is a differential pair topology consisted …

Frequency reconfigurable dual-band CMOS power amplifier for millimeter-wave 5G communications

J Lee, JS Paek, S Hong - 2021 IEEE MTT-S International …, 2021 - ieeexplore.ieee.org
A frequency reconfigurable dual-band power amplifier (PA) with reconfigurable transmission
line transformers (TLT) is presented, which can be operated at both the n257 (26.5-29.5 …

A 90 GHz Broadband Balanced 8-Way Power Amplifier for High Precision FMCW Radar Sensors in 65-nm CMOS

H Lee, VS Trinh, JD Park - Sensors, 2022 - mdpi.com
We present a W-band 8-way wideband power amplifier (PA) for a high precision frequency
modulated continuous wave (FMCW) radar in 65-nm CMOS technology. To achieve a …

A Gm-Compensated 46-101 GHz Broadband Power Amplifier for High-Resolution FMCW Radars

D Wang, Z Shen, X Su, Z Liu, Y Tan… - … on Circuits and …, 2021 - ieeexplore.ieee.org
A Gm-compensated 46-101 GHz broadband power amplifier (PA) for high-resolution FMCW
radars is presented in this paper. For bandwidth (BW) expanding, a Gm compensator-based …

A 21.5–26.4 GHz CMOS cascode driver amplifier with 13.9 dBm output power for 24G FMCW radar applications

W Feng, D Chen, C Zhao, Y Gu, X Zhang… - 2018 IEEE MTT-S …, 2018 - ieeexplore.ieee.org
This paper presents a 21.5-26.4 GHz CMOS cascode driver amplifier (DA) for 24G radar
applications. The two stacked cascode configuration can provide enough output power and …

A 18-24 GHz Compact Single Stage Amplifier with 13±0.5 dB gain, OP3dB of+ 19 dBm and 19% PAE for Radar Applications in Tower 180 nm CMOS

S Jameson, N Buadana, E Sźulc… - 2019 IEEE …, 2019 - ieeexplore.ieee.org
This paper proposes a modified differential cascode amplifier topology for mm-wave
applications requiring wideband amplification, flatness and compact integration area. The …

A 28 GHz and 38 GHz high-gain dual-band power amplifier for 5G wireless systems in 22 nm FD-SOI CMOS

X Xu, S Li, L Szilagyi, C Matthus… - 2020 50th European …, 2021 - ieeexplore.ieee.org
This paper presents a high-gain, dual-band power amplifier for 5G wireless systems, which
supports a simultaneous operation at 28 GHz and 38 GHz. The circuit is based on two …