Isotropic plasma atomic layer etching (ALE) was developed for titanium nitride (TiN) through
a three-step process: plasma oxidation, plasma fluorination, and thermal removal at low …

Thermal atomic layer etching (ALE) is a promising method for isotropic etching with atomic
level precision and high conformality over three-dimensional structures. In this study, a …

Isotropic atomic-layer etching (ALE) of TiN—by using a plasma-assisted thermal-cyclic
process with a 300-mm tool—was demonstrated. The process consists of exposure to a …

To avoid plasma induced erosion of chamber hardware, the application of remote plasma
sources to activate the etch gases was introduced. We present results on the etch behaviour …

Tantalum was etched in a downstream, atmospheric-pressure plasma. In this process,
etching occurred without significant ion bombardment. An etching rate of 6.0±0.5 μm/min …

In this study, a cyclic isotropic plasma atomic layer etching (ALE) process was developed for
aluminum oxide that involves fluorination with NF 3 plasma and ligand exchange with …

The atomic layer etching process of Al 2 O 3, AlN x and HfO 2 in conventional plasma
etching tool was investigated. The etching process is based on surface modification by …

We investigated the surface reaction of the thermal atomic layer etching (ALE) of Al 2 O 3
film using fluorine (F) radicals and trimethylaluminum (TMA). As a strong fluorination source …

The thermal atomic layer etching (ALE) of TiN was demonstrated using a new etching
mechanism based on sequential, self-limiting oxidation and fluorination reactions. The …

Atomic layer etching (ALE) is a promising technique that can solve the challenges
associated with continuous or pulsed plasma processes—trade-offs between selectivity …