The structural and optical properties of lattice-matched InAs 0.911 Sb 0.089 bulk layers and
strain-balanced InAs/InAs 1− x Sb x (x∼ 0.1–0.4) superlattices grown on (100)-oriented …

Strain-balanced InAs/InAsSb superlattices offer access to the mid-to long-wavelength
infrared region with what is essentially a ternary material system at the GaSb lattice constant …

Strain-balanced InAs/InAs 1− x Sb x type-II superlattices (SLs) on GaSb substrates with
0.27≤ x≤ 0.33 were grown by molecular beam epitaxy and demonstrated …

The optical properties of bulk InAs 0.936 Bi 0.064 grown by molecular beam epitaxy on a
(100)-oriented GaSb substrate are measured using spectroscopic ellipsometry. The index of …

We report on the epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-ІІ
superlattices (T2SLs) on GaSb substrates by metalorganic chemical vapor deposition. For …

We report the growth and optical characterization of InAsSb/InAs strain balanced
superlattice structures on GaSb substrates for potential application in midinfrared …

Strain-balanced type-II InAs/InAs 1–x Sb x superlattices with various compositions (x= 0.22,
0.23, 0.37) and different layer thicknesses (t InAs= 7 nm, t InAsSb= 3.3, 2.3, 2.0 nm …

InAsSb/InAs type II strain balanced superlattices lattice matched to GaSb have recently been
proposed as an alternative to InAs/(In) GaSb short period superlattices for mid-to long …

InAs/InAs 1− x Sb x type II superlattices designed for mid-wavelength infrared photo-
detection have been studied using several electron microscopy methods, with specific …

Abstract InAs 0.91 Sb 0.09 lattice matched to a GaSb substrate by molecular beam epitaxy
(MBE) is characterized by photoluminescence and photoconductivity measurements …