Atomic layer etch methods and hardware for patterning applications
Methods and apparatuses for patterning carbon-containing material over a layer to be
etched are provided herein. Methods involve trimming carbon-containing material by atomic …
etched are provided herein. Methods involve trimming carbon-containing material by atomic …
Atomic layer etch, reactive precursors and energetic sources for patterning applications
Methods and apparatuses for patterning carbon-containing material over a layer to be
etched are provided herein. Methods involve trimming carbon-containing material by atomic …
etched are provided herein. Methods involve trimming carbon-containing material by atomic …
Method for forming a mask by etching conformal film on patterned ashable hardmask
N Shamma, B Van Schravendijk, S Reddy… - US Patent …, 2016 - Google Patents
Methods and apparatuses for multiple patterning using image reversal are provided. The
methods may include depositing gap-fill ashable hardmasks using a deposition-etch-ash …
methods may include depositing gap-fill ashable hardmasks using a deposition-etch-ash …
Atomic layer deposition and etch for reducing roughness
Methods and apparatuses for reducing roughness using integrated atomic layer deposition
(ALD) and etch processes are described herein. In some implementations, after a mask is …
(ALD) and etch processes are described herein. In some implementations, after a mask is …
Atomic layer deposition and etch in a single plasma chamber for critical dimension control
Methods and apparatuses for critical dimension (CD) control of substrate features using
integrated atomic layer deposition (ALD) and etch processes are described herein. Methods …
integrated atomic layer deposition (ALD) and etch processes are described herein. Methods …
Method of forming high aspect ratio features
M Utsuno, H Sugiura, S Yoshio - US Patent App. 17/148,391, 2021 - Google Patents
Methods and systems for forming high aspect ratio features on a substrate are disclosed.
Exemplary methods include forming a first carbon layer within a recess, etching a portion of …
Exemplary methods include forming a first carbon layer within a recess, etching a portion of …
Self-aligned multi-patterning process flow with ALD gapfill spacer mask
A Lavoie - US Patent 10,832,908, 2020 - Google Patents
Methods and apparatuses for forming symmetrical spacers for self-aligned multiple
patterning processes are described herein. Methods include depositing gapfill material by …
patterning processes are described herein. Methods include depositing gapfill material by …
Deposition of conformal films by atomic layer deposition and atomic layer etch
M Danek, J Henri, S Tang - US Patent 9,502,238, 2016 - Google Patents
Methods for depositing conformal films using a halogen-containing etchant during atomic
layer deposition are provided. Methods involve exposing a substrate to a halogen …
layer deposition are provided. Methods involve exposing a substrate to a halogen …
Geometrically selective deposition of a dielectric film
DM Hausmann, AR Fox, DC Smith… - US Patent …, 2020 - Google Patents
Provided are methods for the selective deposition of material on a sidewall surface of a
patterned feature. In some embodiments, the methods involve providing a substrate having …
patterned feature. In some embodiments, the methods involve providing a substrate having …
Directional deposition on patterned structures
A Kabansky, S Tan, J Marks, Y Pan - US Patent App. 15/061,359, 2017 - Google Patents
Provided herein are methods and related apparatus that facilitate patterning by performing
highly non-conformal (directional) deposition on patterned structures. The methods involve …
highly non-conformal (directional) deposition on patterned structures. The methods involve …